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PRODID:-//AT Content Types//AT Event//EN
VERSION:1.0
BEGIN:VEVENT
DTSTART:20080129T070000Z
DTEND:20080129T080000Z
DCREATED:20080125T025155Z
UID:ATEvent-4d5aa6be8009f3f89d1972eb2533c00b
SEQUENCE:0
LAST-MODIFIED:20080125T030011Z
SUMMARY:Recent Advances and Future Directions of MOS Devices for RF Applications
DESCRIPTION:A Distinguished Lecturer Seminar by \n- Juin J. Liou\, Pro
 fessor\, School of Electrical Engineering and Computer Science - Direc
 tor\, Solid State Electronics Lab and Device Characterization Lab\, Un
 iversity of Central Florida\, Orlando\, Florida\, USA\n- Cao Guang-Bia
 o\, Endowed Professor - Zhejiang University\, China
LOCATION:Billings Room 3.04 (3rd Floor) EECE
PRIORITY:3
TRANSP:0
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