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Recent Advances and Future Directions of MOS Devices for RF Applications

A Distinguished Lecturer Seminar by - Juin J. Liou, Professor, School of Electrical Engineering and Computer Science - Director, Solid State Electronics Lab and Device Characterization Lab, University of Central Florida, Orlando, Florida, USA - Cao Guang-Biao, Endowed Professor - Zhejiang University, China

What Seminar
When 2008-01-29
from 16:00 to 17:00
Where Billings Room 3.04 (3rd Floor) EECE
Contact Name Professor Adam Osseiran
Contact Email
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It is beyond anyone’s imagination as to how the MOS transistors could have transformed and advanced in the past 40 years. Traditionally, III-V compound transistors are the mainstream high-speed devices, and MOSFETs have long been considered as slow devices not suitable for radio frequency (RF) applications. Thanks to the aggressive feature size reduction...

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